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FDP75N08A 75V N-Channel MOSFET
July 2006
UniFET
FDP75N08A
75V N-Channel MOSFET
Features
* * * * * 75A, 75V, RDS(on) = 0.011 @VGS = 10 V Low gate charge ( typical 145nC) Low Crss ( typical 86pF) Fast switching Improved dv/dt capability
TM
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.
D
G GDS
TO-220
FDP Series
S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current - Continuous (TC = 25C) - Continuous (TC = 100C) Drain Current - Pulsed
(Note 1)
Parameter
FDP75N08A
75 75 47 300 20
(Note 2) (Note 1) (Note 1) (Note 3)
Units
V A A A V mJ A mJ V/ns W W/C C C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds
1738 75 13.7 4.5 137 1.09 -55 to +150 300
Thermal Characteristics
Symbol
RJC RJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
FDP75N08A
0.91 62.5
Units
C/W C/W
(c)2006 Fairchild Semiconductor Corporation
1
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FDP75N08A Rev. A2
FDP75N08A 75V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking
FDP75N08A
Device
FDP75N08A
Package
TO-220
Reel Size
--
Tape Width
--
Quantity
50
Electrical Characteristics
Symbol
Off Characteristics BVDSS BVDSS/ TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd
TC = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current
Test Conditions
VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 75 V, VGS = 0 V VDS = 60 V, TC = 125C VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 A VGS = 10 V, ID = 37.5 A VDS = 40 V, ID = 37.5 A VDS = 25 V, VGS = 0 V, f = 1.0 MHz
(Note 4)
Min
75 ------
Typ
-0.6 -----
Max Units
--1 10 100 -100 V V/C A A nA nA
Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance 2.0 ---9.4 15 4.0 11 -V m S
Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance ---3437 738 86 4468 959 129 pF pF pF
Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time
(Note 4, 5)
VDD = 37.5 V, ID = 75A, RG = 25
-----
43 212 273 147 80 20 24
95 434 556 303 104 ---
ns ns ns ns nC nC nC
Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 60 V, ID = 75A, VGS = 10 V
(Note 4, 5)
----
Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr
NOTES: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 206H, IAS =75A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 75A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature
Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 75 A VGS = 0 V, IS = 75 A, dIF / dt = 100 A/s
(Note 4)
------
---62 145
75 300 1.4 ---
A A V ns nC
2 FDP75N08A Rev. A2
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FDP75N08A 75V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
VGS 15.0V 9.0V 7.5V 7.0V 6.5v 6.0V 5.5V 5.0V Bottom : 4.5V Top:
Figure 2. Transfer Characteristics
100
ID, Drain Current [A]
ID, Drain Current [A]
150 C -55 C
0
0
10
2
25 C
10
0
* Note : 1. 250s Pulse Test 0 2. TC=25 C
* Note : 1. VDS=40V 2. 250s Pulse Test
10
1
1
0
10
10
1
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue
0.012
RDS(ON) [], Drain-Source On-Resistance
IDR, Reverse Drain Current [A]
0.011
10
2
VGS = 10V
0.010
150 C
10
1
0
25 C
0
0.009
VGS = 20V
0.008 * Note : TJ = 25 C 0.007 0 25 50 75 100 125 150 175 200
o
* Note : 1. VGS=0V 2. 250s Pulse Test
0
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
ID, Drain Current [A]
VDS, Source-Drain Violtage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
12
6000
Coss Ciss
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
10
VDS = 15V VDS = 37.5V
5000
VGS, Gate-Source Voltage [V]
Capacitances [pF]
8
VDS = 60V
4000
6
3000 * Note : 1. VGS = 0 V 2. f = 1 MHz
2000
Crss
4
1000
2
* Note : ID = 75A
0 0 10 20 30 40 50 60 70
0 -1 10
10
0
10
1
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
3 FDP75N08A Rev. A2
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FDP75N08A 75V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature
1.2
3.0
BVDSS, (Normalized) Drain-Source Breakdown Voltage
1.1
RDS(ON), (Normalized) Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0 * Notes : 1. VGS = 10 V 2. ID = 37.5 A
0.9
* Notes : 1. VGS = 0 V 2. ID = 250 A
0.5
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case Temperature
100
10
3
10 s
80
10
2
100 s 1ms 10ms 100ms DC
ID, Drain Current [A]
ID, Drain Current [A]
o
60
10
1
Operation in This Area is Limited by R DS(on)
40
10
0
* Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
20
10
-1
10
0
10
1
10
2
0 25
50
75
100
o
125
150
VDS, Drain-SourceVoltage[V]
TC, Case Temperature [ C]
Figure 11. Transient Thermal Response Curve
10
0
D=0.5
Z? JC Thermal Response (t),
0.2
10
-1
0.1 0.05
PDM
0.02 0.01
10
-2
t1 t2
single pulse
* Notes : 0 1. ZJC(t) = 0.91 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZJC(t)
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t1, Square Wave Pulse Duration [sec]
4 FDP75N08A Rev. A2
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FDP75N08A 75V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
5 FDP75N08A Rev. A2
www.fairchildsemi.com
FDP75N08A 75V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
6 FDP75N08A Rev. A2
www.fairchildsemi.com
FDP75N08A 75V N-Channel MOSFET
Mechanical Dimensions
TO-220
Dimensions in Millimeters
7 FDP75N08A Rev. A2
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TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
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LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I20

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